Fairchild Manuals

This document describes the features and characteristics of Fairchild Semiconductor Corporation's FDP13N50F / FDPF13N50FT N-Channel MOSFET, including 500V drain-to-source voltage, 12A drain current, 0.54Ω on-state resistance, low gate charge, low output capacitance, fast switching speed, 100% avalanche tested, and improved dv/dt capability.

This document introduces the FDP12N50U / FDPF12N50UT N-Channel MOSFET product from Fairchild Semiconductor Corporation. The product features low on-state resistance, low gate charge, and low Crss, with fast switching and improved dv/dt capability. It is suitable for high efficient switching mode power supplies and active power factor correction.

The FDP12N50F / FDPF12N50FT N-Channel MOSFET is a 500V, 11.5A, 0.7Ω N-channel power field effect transistor that features low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche testing, improved dv/dt capability, and RoHS compliance.

FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It uses Fairchild's proprietary planar stripe DMOS technology, which has low on-state resistance, superior switching performance, high energy pulse withstand capability and fast switching characteristics. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

This document describes the features and characteristics of the Fairchild Semiconductor Corporation's FDP10N50U / FDPF10N50UT N-Channel MOSFET, including 500V drain to source voltage, 8A drain current, and 1.05Ω on-state resistance.

This document describes the features and characteristics of FDP10N50F / FDPF10N50FT N-Channel MOSFET, including 500V voltage, 9A current, 0.85Ω resistance, etc.

FDPF085N10A is a N-Channel MOSFET produced by Fairchild Semiconductor using PowerTrench process. It features low RDS(on), fast switching speed, low gate charge.

FDPF045N10A is an N-Channel PowerTrench® MOSFET from Fairchild Semiconductor. It has a rated voltage of 100V and a maximum continuous current of 67A. The typical on-state resistance is 3.7mΩ.

FDPC8013S PowerTrench® Power Clip is a 30V Asymmetric Dual N-Channel MOSFET, which features low resistance, low parasitic inductance and easy to use

FDPC8011S PowerTrench® Power Clip is a 25V Asymmetric Dual N-Channel MOSFET. It features low on-resistance, integrated complementary switch nodes, and easy routing. It can be used in computing, communications, and general purpose power applications.

FDP8N50NZ / FDPF8N50NZT UniFETTM N-Channel MOSFET is a high-quality product with 500V, 8A, and 0.85Ω features. It has low on-state resistance, low gate charge, and low Crss. This device is produced using Fairchild's proprietary, planar stripe, DMOS technology, and has advantages such as fast switching, 100% avalanche testing, and ESD improved capability. It is suitable for high efficient switching mode power supplies and active power factor correction applications.

Fdp8896 is an n-channel power transistor from fairchild semiconductor corporation. It has a rated voltage of 30v, a rated current of 92a, and a rated on-resistance of 5.9mΩ. The device uses high-performance trench technology for extremely low on-resistance and low gate charge, and is suitable for applications such as dc/dc converters.

FDP8876 N-Channel PowerTrench® MOSFET is a high performance N-channel MOSFET with low gate charge, low rDS(ON) and fast switching speed.

FDP8874 is a N-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. It is rated at 30V and 114A with a typical on-resistance of 5.3mΩ. It is mainly used in DC/DC converters.

FDP8860 is an N-channel MOSFET with a rated voltage of 30V and a rated current of 80A. The maximum on-resistance is 2.5mΩ. This device has low gate charge, low rDS(on) and fast switching speed.