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The FDMS86320 N-Channel PowerTrench® MOSFET is a low rDS(on), high efficiency, fast switching power MOSFET designed for use in synchronous or conventional switching PWM controllers.
FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET is a high performance N-Channel MOSFET with extremely low on-resistance(3.1 mΩ), which can be applied to DC/DC converters, telecom secondary side rectifiers and other scenarios.
This document describes the features and characteristics of the FDMS86300 N-Channel PowerTrench® MOSFET. This MOSFET features advanced packaging and silicon combination for low rDS(on) and high efficiency. It also utilizes next generation enhanced body diode technology for soft recovery. The MOSFET is 100% UIL tested and RoHS compliant.
The FDMS86252 N-Channel PowerTrench® MOSFET is a high performance switching device that is manufactured using Fairchild Semiconductor's advanced Power Trench® process. It features low on-state resistance and high switching speed.
This document describes the features and characteristics of the FDMS86250 N-Channel PowerTrench® MOSFET. The product has a maximum rDS(on) value of 25 mΩ and 33 mΩ, and is suitable for DC-DC conversion power. It features advanced package and silicon combination for low rDS(on) and high efficiency.
This datasheet provides the characteristics parameters of FDMS8622 N-Channel PowerTrench® MOSFET, including maximum rDS(on), features, package, applications etc.
FDMS86200 N-Channel Power Trench® MOSFET is a high performance power MOSFET produced by Fairchild Semiconductor. It uses the advanced Power Trench® process to achieve low on-state resistance and high switching speed. It is suitable for DC-DC conversion applications.
The FDMS86105 is an N-Channel PowerTrench® MOSFET power field-effect transistor. This product features a maximum rDS(on) of 34 mΩ (at VGS = 10 V, ID = 6 A) and a maximum rDS(on) of 54 mΩ (at VGS = 6 V, ID = 4.5 A). It utilizes an advanced package and silicon combination for low rDS(on) and high efficiency. The product is 100% UIL tested and RoHS compliant.
This document describes the features and characteristics of the FDMS86104 N-Channel PowerTrench® MOSFET, including maximum on-state resistance, advanced package and silicon combination, MSL1 robust package design, 100% UIL testing, and RoHS compliance.
FDMS86103L N-Channel Power Trench® MOSFET is a 100 V, 49 A, 8 mΩ N-channel MOSFET with the following features: Max RDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A; Max RDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A; Advanced package and silicon combination for low RDS(on) and high efficiency; MSL1 robust package design; 100% UIL tested; RoHS Compliant.
This document describes the features and characteristics of the FDMS86102LZ N-Channel Power Trench® MOSFET, including maximum on-state resistance, ESD protection level, and applications such as DC-DC conversion, inverter, and synchronous rectifier.
MMSZ4688 is a 5% tolerance Zener diode with a voltage range of 4.47-4.94V. It features a compact surface mount package and a power dissipation of 500mW.
FDMS86101DC is a N-Channel MOSFET produced by Fairchild Semiconductor. It uses the advanced Power Trench® process to achieve extremely low on-resistance and excellent switching performance. It is suitable for applications such as DC-DC converters, synchronous rectifiers and load switches.
