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This document describes the features and characteristics of the FDP5N50F / FDPF5N50FT N-Channel MOSFET product released in May 2012, including a drain-to-source voltage of 500V, a drain current of 4.5A, and an on-state resistance of 1.55 ohms.
FDP4N60NZ / FDPF4N60NZ is an N-channel enhancement mode power field effect transistor with 600V voltage, 3.8A current, and 2.5Ω resistance. It features low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, and ESD improved capability. The product is RoHS compliant.
This document describes the features and characteristics of FDP44N25 / FDPF44N25T 250V N-Channel MOSFET, including 44A current, 250V voltage, low gate charge, and low Crss value.
FDP3N50NZ / FDPF3N50NZ N-Channel MOSFET datasheet provides product information, such as product features, specifications, dimensions, and pictures, in English
This document describes the features and characteristics of the FDP39N20 / FDPF39N20 200V N-Channel MOSFET, including 39A current, 0.066Ω RDS(on), low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability.
FDPF390N15A N-Channel PowerTrench® MOSFET is a high performance N-channel MOSFET device with low RDS(on), fast switching speed, low gate charge, etc. It is suitable for DC/DC converters and synchronous rectifiers.
This document describes the features and characteristics of the FDPF3860T N-Channel PowerTrench® MOSFET. It has low RDS(on), fast switching speed, low gate charge, and high power and current handling capability.
FDPF320N06L N-Channel PowerTrench® MOSFET, 60V, 21A, 25mΩ is a high-performance MOSFET produced by Fairchild Semiconductor. The product features low on-state resistance, low gate capacitance, low reverse recovery current, fast switching, 100% avalanche testing, improved dv/dt capability, and is widely used in DC to DC and other fields.
This is a document about the FDPF2710T 250V N-Channel PowerTrench MOSFET. The product is produced using Fairchild Semiconductor's advanced PowerTrench process, which is tailored to minimize on-state resistance while maintaining superior switching performance.
FDPF190N15A N-Channel PowerTrench® MOSFET is a high performance MOSFET with low on-state resistance, low gate charge and low reverse recovery capacitance.
FDP17N60N / FDPF17N60NT N-Channel MOSFET is a 600V, 17A, 0.34 ohm power field effect transistor. This product has RDS(on) = 0.29ohm (Typ.)@ VGS = 10V, ID = 8.5A, low gate charge (Typ. 48nC), low Crss (Typ. 23pF), fast switching, 100% Avalanche Tested, Improved dv/dt capability, RoHS compliant and other features.
This is an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary DMOS technology. It features low on-state resistance, fast switching speed, and high energy pulse capability in avalanche and commutation mode. It is suitable for high efficient switching mode power supplies and active power factor correction.
This document describes the features and characteristics of FDP15N65 / FDPF15N65 650V N-Channel MOSFET, including 15A current, 650V voltage, low gate charge, fast switching speed, etc.
The FDP14N30 / FDPF14N30 300V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It has the features of 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V, low gate charge (typical 18 nC), low Crss (typical 17 pF), fast switching, 100% avalanche tested, and improved dv/dt capability.
