This document describes the features and characteristics of Fairchild Semiconductor Corporation's FQB34P10 / FQI34P10 100V P-Channel MOSFET products. They are produced using advanced DMOS technology, with low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
This document is a datasheet for the Fairchild Semiconductor FQB34P10 and FQI34P10, which are 100V P-Channel enhancement mode power field effect transistors. These devices utilize the manufacturer's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for low voltage applications including audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Drain-Source Voltage | -100 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | -33.5 A |
| Static Drain-Source On-Resistance | 0.06 ℧ |
| Total Gate Charge (Typ) | 85 nC |
| Reverse Transfer Capacitance (Typ) | 170 pF |
| Maximum Junction Temperature | 175°C |
| Power Dissipation (TC = 25°C) | 155 W |
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The maximum junction temperature rating is 175°C.
Yes, the devices are 100% avalanche tested.