Fairchild Semiconductor FQB7P20/FQI7P20 200V P-Channel MOSFET Datasheet

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Fairchild Semiconductor FQB7P20/FQI7P20 200V P-Channel MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
808 KB
Published
12 July, 2012
Updated
01 October, 2023
MD5 checksum
A9FB75BD51ED963E78163A5E415D197E

About this manual

This document is a datasheet for the Fairchild Semiconductor FQB7P20 and FQI7P20, which are 200V P-Channel enhancement mode power field effect transistors. These devices utilize the manufacturer's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance suitable for high efficiency DC/DC converters.

The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristics including graphs for capacitance, gate charge, and safe operating areas. It also includes mechanical dimensions for the D2-PAK package and test circuit diagrams.

What's inside

  • General Description
  • Features
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Test Circuits
  • Mechanical Dimensions

Specifications

Drain-Source Voltage-200 V
Continuous Drain Current (Tc = 25°C)7.3 A
Power Dissipation (Ta = 25°C)3.13 W
Operating and Storage Temperature Range-55 to +150 °C
Total Gate Charge (Typ)19 nC
Package TypeD2-PAK

Frequently asked questions

Is the FQB7P20 RoHS compliant?

Yes, the device is RoHS Compliant.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current at 25°C is 7.3 A.

What is the typical on-state resistance?

The typical on-state resistance is 0.692 Ohms at Vgs = -10V.

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