Key facts
- Model
- IR2103
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-10
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International IOR Rectifier IR2103(S) handbook
This document describes the features and characteristics of the IR2103(S) high voltage, high speed power MOSFET and IGBT drivers, such as floating channel design, bootstrap operation, negative transient voltage immunity, logic compatibility, etc.
Read onlineInternational Rectifier IR2103 specifications
| Maximum high‑side floating voltage (VB) | 625 V |
|---|---|
| Maximum VOFFSET | 600 V |
| Gate‑drive supply range | 10 V to 20 V |
| Typical turn‑on propagation delay | 680 ns |
| Typical turn‑off propagation delay | 150 ns |
| Typical dead‑time | 520 ns |
| Operating temperature range | -40 °C to 125 °C |
| Storage temperature range | -55 °C to 150 °C |
| Maximum junction temperature | 150 °C |
| Package options | 8‑Lead PDIP, 8‑Lead SOIC |
Source: lnternational IOR Rectifier IR2103(S) (PbF) handbook
All International Rectifier IR2103 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum supply voltage for the IR2105?
The device can tolerate up to 600 V on the high‑side floating channel.
What is the typical turn‑on propagation delay?
Typical turn‑on propagation delay is 680 ns.
What is the maximum voltage rating for the high‑side floating supply?
The high‑side floating supply (VB) can be rated up to 625 V.
From: International Rectifier IR2103S (PbF) Half-Bridge Driver Datasheet
What is the typical deadtime of the IR2103S?
The typical deadtime is specified as 520 ns.
From: International Rectifier IR2103S (PbF) Half-Bridge Driver Datasheet
