Key facts
- Model
- IRF2807
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-15
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International Rectifier IRF2807 HEXFET Power MOSFET Datasheet
This document is a datasheet for the International Rectifier IRF2807 HEXFET Power MOSFET. It describes the device as utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speed and a ruggedized design. The TO-220AB package is highlighted for its wide acceptance in commercial-industrial applications due to low thermal resistance and cost.
Read onlineInternational Rectifier IRF2807 specifications
| Continuous Drain Current (25°C) | 82 A |
|---|---|
| Continuous Drain Current (100°C) | 58 A |
| Power Dissipation (25°C) | 230 W |
| Operating Junction Temperature | -55 to +175°C |
| Drain-to-Source Breakdown Voltage | 75 V |
| Static Drain-to-Source On-Resistance | 13 mΩ |
| Gate Threshold Voltage | 2.0 to 4.0 V |
| Package Type | TO-220AB |
Source: International Rectifier IRF2807 HEXFET Power MOSFET Datasheet
All International Rectifier IRF2807 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum operating junction temperature?
The operating junction temperature range is from -55°C to +175°C.
From: International Rectifier IRF2807 HEXFET Power MOSFET Datasheet
What is the continuous drain current at 25°C?
The continuous drain current at 25°C is 82 A.
From: International Rectifier IRF2807 HEXFET Power MOSFET Datasheet
What is the maximum continuous drain current for this MOSFET at 25°C?
The maximum continuous drain current is 82 A when the temperature is 25°C.
From: International Rectifier IRF2807S/IRF2807L HEXFET Power MOSFET Datasheet
What is the maximum power dissipation in a typical surface mount application?
The device can dissipate up to 2.0 W in a typical surface mount application.
From: International Rectifier IRF2807S/IRF2807L HEXFET Power MOSFET Datasheet