This document describes the FQP9P25 P-Channel MOSFET product. The product is produced using Fairchild's proprietary technology, with features of low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for high efficiency switching DC/DC converters.
This document provides the design specifications for the FQP9P25, a 250V P-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance for high efficiency DC/DC converters. Key features include a continuous drain current of -9.4A, low gate charge, and 100% avalanche testing.
| Drain-Source Voltage | -250 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | -9.4 A |
| Power Dissipation (Tg = 25°C) | 120 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
| Gate Threshold Voltage | -3.0 to 5.0 V |
The operating and storage temperature range is from -55 to +150 °C.