This document describes the features and characteristics of FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET, including 10A current, 500V voltage, low gate charge and low Crss, fast switching, improved dv/dt capability.
The document describes the FQP10N50CF and FQPF10N50CF devices as 10A, 500V N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These components are designed to minimize on-state resistance and provide superior switching performance for high-efficiency switched-mode power supplies and active power factor correction applications.
| Continuous Drain Current (ID) at TC = 25 °C | 10 A |
|---|---|
| Pulsed Drain Current (IDM) | 40 A |
| On-State Resistance (RDS(on)) | 0.61 ℧ @VGS = 10 V |
| Total Gate Charge (Qg) | 43 nC |
| Reverse Transfer Capacitance (Crss) | 16 pF |
| Operating Temperature Range | -55 to +150 °C |
These devices are well suited for high efficient switched mode power supplies and active power factor correction.
The maximum operating and storage temperature range extends up to +150 °C.
Yes, the devices are 100% avalanche tested.