FQT13N06L is a 60V logic N-channel MOSFET produced by Fairchild. It has low gate charge, low reverse capacitance, high switching speed, and improved dv/dt capability.
The FQT13N06L is a 60V, 2.8A N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. It is designed to minimize on-state resistance and provide superior switching performance, making it well-suited for low voltage applications such as automotive systems, DC/DC converters, and high efficiency switching in portable products.
The document details the absolute maximum ratings, electrical characteristics including off and on characteristics, and dynamic parameters like capacitance and switching times. It also includes typical performance graphs for capacitance, gate charge, on-resistance, and safe operating areas, along with package dimensions for the SOT-223 package.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (25°C) | 2.8 A |
| Pulsed Drain Current | 11.2 A |
| On-Resistance (VGS=10V) | 0.11 Ω |
| Package Type | SOT-223 |
| Operating Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 2.8 A at a case temperature of 25°C.
The on-state resistance is 0.11 Ω when the gate-source voltage is 10 V.
The maximum gate-source voltage rating is ±20 V.