FQT1N80TF_WS is an N-channel enhancement mode power field effect transistor produced by Fairchild. This product uses Fairchild's proprietary planar stripe DMOS technology and has low on-state resistance, superior switching performance, high energy pulse bearing capability and improved dv/dt capability. It is suitable for high efficient switched mode power supplies and active power factor correction.
This document is a technical datasheet for the Fairchild Semiconductor Corporation FQT1N80TF_WS N-Channel MOSFET. The device utilizes proprietary planar stripe DMOS technology and features low gate charge, low Crss, and fast switching performance suitable for high efficient switched mode power supplies.
| Drain to Source Voltage | 800 V |
|---|---|
| Gate to Source Voltage | +30 V |
| Continuous Drain Current (Tc = 25°C) | 0.2 A |
| Pulsed Drain Current | 0.8 A |
| Single Pulsed Avalanche Energy | 90 mJ |
| Power Dissipation (Tc = 25°C) | 2 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
The operating and storage temperature range is from -55 to +150 °C.