This datasheet provides the characteristics and parameters of FQT1N60C N-Channel MOSFET. The product is manufactured by Fairchild and is a 600V, 0.2A N-channel enhancement mode power field-effect transistor. The product has a low on-state resistance of 9.3 ohms, 4.8nC of low gate charge and 3.5pF of low Crss. It also has fast switching, 100% avalanche testing and improved dv/dt capability. The product is RoHS compliant and is suitable for high efficient switched mode power supplies and active power factor correction.
This document is a technical datasheet for the Fairchild Semiconductor FQT1N60C, an N-channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance.
Key features highlighted in the text include low gate charge (Typ. 4.8nC), low Crss capacitance (Typ. 3.5pF), fast switching speeds, and 100% avalanche testing. The component is RoHS compliant and intended for use in high-efficiency switched mode power supplies and active power factor correction applications.
| Drain to Source Voltage (Vdss) | 600 V |
|---|---|
| Gate to Source Voltage (Vgss) | +30 V |
| Continuous Drain Current (Ta = 25°C) | 0.2 A |
| Pulsed Drain Current | 0.8 A |
| Power Dissipation (Ta = 25°C) | 21 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
The device operates and stores within a temperature range of -55 to +150 °C.