This document describes the features and characteristics of the QFET TM FQD20N06L / FQU20N06L products released in March 2009. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This technology has been specially designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
This document is a datasheet for the Fairchild Semiconductor FQD20N06L and FQU20N06L, which are 60V Logic N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are well-suited for low voltage applications such as automotive systems, DC/DC converters, and high-efficiency switching for power management in portable products.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 17.2 A |
| Continuous Drain Current (Tj = 100°C) | 10.9 A |
| On-Resistance | 0.082 @ Vgs = 10V |
| Gate Charge (Typical) | 9.5 nC |
| Reverse Transfer Capacitance | 35 pF |
| Maximum Junction Temperature | 150°C |
| Power Dissipation (Tc = 25°C) | 38 W |
| Operating Temperature Range | -55 to +150 °C |
The typical gate charge is 9.5 nC.
The maximum junction temperature rating is 150°C.
The continuous drain current is 17.2 A at a junction temperature of 25°C.