FQT4N20L is a 200V N-Channel MOSFET produced by Fairchild. Its features are low on-state resistance, fast switching, high dv/dt, 100% avalanche testing, and low-voltage drive.
The FQT4N20L is an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. This advanced technology is tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. The device is well-suited for high-efficiency switching DC/DC converters, switch-mode power supplies, DC-AC converters for uninterruptible power supply, and motor control applications.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (25°C) | 0.85 A |
| On-Resistance | 1.35 Ω |
| Gate Charge | 4.0 nC |
| Reverse Transfer Capacitance | 6.0 pF |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT-223 |
The maximum continuous drain current at 25°C is 0.85 A.
Yes, it has a low level gate drive requirement allowing direct operation from logic drivers.
The FQT4N20L is available in the SOT-223 package.