BC307/308/309 are PNP type silicon transistors manufactured by Fairchild Semiconductor Corporation. The transistor has a collector-emitter voltage of -50 to -30 V, a collector-emitter breakdown voltage of -45 to -25 V, an emitter-base voltage of -5 V, a collector current of -100 mA and a collector power dissipation of 500 mW. The transistor is typically used in switching and amplifier applications.
The document is a technical datasheet for the Fairchild BC307/308/309 series of PNP epitaxial silicon transistors. It details the absolute maximum ratings, such as collector-emitter voltage and power dissipation, alongside specific electrical characteristics including DC current gain (hFE), saturation voltages, and noise figures. The series is classified into three categories (A, B, and C) based on their DC current gain ranges.
| Collector Current (DC) | -100 mA |
|---|---|
| Collector Power Dissipation | 500 mW |
| Junction Temperature | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
The transistors are classified into A, B, and C categories based on their DC current gain (hFE) ranges.
The maximum collector power dissipation is 500 mW.