BFG505W is a NPN 9GHz wideband transistor produced by Philips Semiconductors. It features high power gain, low noise figure and high transition frequency. It is mainly used for RF front end applications such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV).
This datasheet describes the BFG505W, BFG505W/X, and BFG505W/XR, which are NPN silicon planar epitaxial transistors designed for RF front-end applications in the GHz range. These devices feature high power gain and low noise figures, making them suitable for use in cellular telephones, radar detectors, and satellite television tuners.
| Collector-Base Voltage | 20 V |
|---|---|
| Collector-Emitter Voltage | 15 V |
| Collector Current (DC) | 18 mA |
| Total Power Dissipation | 500 mW |
| Transition Frequency | 9 GHz |
| Maximum Unilateral Power Gain | 19 dB |
| Insertion Power Gain | 16 dB |
| Noise Figure | 1.9 dB |
The total power dissipation is 500 mW when the temperature is below 85 °C.
The transition frequency is 9 GHz under specified test conditions.