This datasheet describes the BFG590W and BFG590W/X, which are NPN silicon planar epitaxial transistors housed in a 4-pin dual-emitter SOT343N plastic package. These devices feature high power gain, low noise figure, and a high transition frequency of up to 5 GHz.
| Package Type | 4-pin dual-emitter SOT343N plastic package |
|---|---|
| Collector-Base Voltage (VcBo) | 20 V |
| Collector-Emitter Voltage (VcEo) | 15 V |
| Collector Current (DC) (Ic) | 200 mA |
| Total Power Dissipation (Prot) | 500 mW |
| DC Current Gain (hFE) Typ. | 90 |
They offer high power gain, low noise figure, and a high transition frequency.
Yes, they are ideally suitable for use in class-A, (A)B and C amplifiers.
The maximum DC collector current is 200 mA.