This document describes the features and characteristics of the BFG591 NPN 7 GHz wideband transistor, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. The product is intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.
The document is a product specification datasheet for the Philips BFG591, an NPN silicon planar epitaxial transistor housed in a plastic SOT223 package. It features high power gain, low noise figure, and a high transition frequency suitable for GHz range applications such as MATV or CATV amplifiers.
| Package Type | Plastic, 4-pin SOT223 package |
|---|---|
| Transition Frequency (ft) | 7 GHz |
| Collector-Base Voltage (VcBo) | 20 V |
| Collector-Emitter Voltage (VcEO) | 15 V |
| Collector Current (Ic) | 200 mA |
| Total Power Dissipation (Prot) | 2 W |
The device can dissipate a maximum of 2 W when the temperature at the collector soldering point does not exceed 80 °C.
The typical DC current gain ranges from a minimum of 60 to a maximum of 250 under specified test conditions.
The collector-emitter breakdown voltage reaches a maximum of 15 V when the base current is zero.