Philips BFG541 NPN Transistor Datasheet

Philips BFG541 NPN 9 GHz wideband transistor, features high power gain, low noise figure, high transition frequency, gold metallization ensures excellent reliability


Philips BFG541 NPN Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
145 KB
Published
06 July, 2012
Updated
30 September, 2023
MD5 checksum
9CD3BC3DA621CC3A00C0EF22F12EE210

About this manual

This datasheet describes the Philips BFG541, a silicon planar epitaxial NPN transistor designed for high power gain and low noise figure in the GHz range. It is suitable for use in analog and digital cellular telephones, cordless phones, radar detectors, satellite TV tuners, and repeater amplifiers.

What's inside

  • Features
  • Description
  • Pinning
  • Quick Reference Data
  • Limiting Values
  • Thermal Resistance
  • Characteristics

Specifications

DC current gain (hFE) typical120
Noise figure (F)1.8 dB

Frequently asked questions

What is the package type for the BFG541?

The transistors are mounted in a plastic SOT223 envelope.

What applications is the BFG541 transistor intended for?

It is intended for wideband applications such as analog and digital cellular telephones, cordless telephones, radar detectors, and satellite TV tuners.

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