Philips BFG541 NPN 9 GHz wideband transistor, features high power gain, low noise figure, high transition frequency, gold metallization ensures excellent reliability
This datasheet describes the Philips BFG541, a silicon planar epitaxial NPN transistor designed for high power gain and low noise figure in the GHz range. It is suitable for use in analog and digital cellular telephones, cordless phones, radar detectors, satellite TV tuners, and repeater amplifiers.
| DC current gain (hFE) typical | 120 |
|---|---|
| Noise figure (F) | 1.8 dB |
The transistors are mounted in a plastic SOT223 envelope.
It is intended for wideband applications such as analog and digital cellular telephones, cordless telephones, radar detectors, and satellite TV tuners.