The document is a product specification datasheet for the Philips BFG590W and BFG590W/X transistors. These are NPN silicon planar epitaxial transistors packaged in a 4-pin dual-emitter SOT343N plastic package. The devices are designed for high power gain, low noise figure, and high transition frequency up to 5 GHz.
| Package type | 4-pin dual-emitter SOT343N plastic package |
|---|---|
| Collector-base voltage | 20 V |
| Collector-emitter voltage | 15 V |
| Collector current (DC) | 200 mA |
| Total power dissipation | 500 mW |
| DC current gain | 60 to 250 |
| Transition frequency | 5 GHz |
They are suitable for MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range, as well as class-A, B, and C amplifiers.
The marking code for the BFG590W/X model is T2.