This datasheet describes the NPN silicon planar epitaxial transistor models BFG520W and BFG520W/X. These devices are housed in a 4-pin dual-emitter SOT343N plastic package and feature gold metallization for excellent reliability.
| Collector-base voltage (VCBO) | 20 V |
|---|---|
| Collector-emitter voltage (VCE) | 15 V |
| Collector current (DC) | 70 mA |
| Total power dissipation | 500 mW |
| DC current gain (hFE) | 60 to 250 |
They are intended for RF front-end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, satellite television tuners, and repeater amplifiers.
The device is an NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
The maximum junction temperature (Tj) is 175 °C.