This document describes the features and characteristics of BFG505W and BFG505W/X NPN 9 GHz wideband transistors, including high power gain, low noise figure, and high transition frequency.
The document is a product specification sheet for the BFG505W and BFG505W/X models. These devices are described as NPN silicon planar epitaxial transistors housed in a 4-pin dual-emitter SOT343N plastic package. They feature high power gain, low noise figure, and gold metallization for reliability.
| DC current gain (Hre) | 60 to 250 |
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These transistors are intended for front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and satellite television tuners.
The maximum total power dissipation is 500 mW when the temperature at the soldering point of the collector pin is less than 85 °C.
The maximum DC collector current is 18 mA.