BFG410W is a NPN 22 GHz wideband transistor from Philips Semiconductors. It features very high power gain, low noise figure, high transition frequency and low feedback capacitance. It is widely used in RF front end, wideband applications, radar detectors, pagers, satellite television tuners and high frequency oscillators.
This datasheet describes the BFG410W, an NPN double polysilicon wideband transistor designed for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Key features include very high power gain, a low noise figure, high transition frequency, and low feedback capacitance.
| Package type | plastic, 4-pin dual-emitter SOT343R |
|---|---|
| Collector-base voltage | 10 V |
| Collector-emitter voltage | 4.5 V |
| Collector current (DC) | 12 mA |
| Total power dissipation | 54 mW |
| Transition frequency | 22 GHz |
| Maximum power gain | 21 dB |
| Noise figure | 1.2 dB |
It is suitable for RF front ends, wideband applications like cellular telephones, radar detectors, pagers, and satellite television tuners.
The operating junction temperature is up to 150 °C.
No, these products are not designed for use in life support appliances or devices where malfunction can result in personal injury.