BFG403W is an NPN 17 GHz wideband transistor with low current, very high power gain, low noise figure, high transition frequency and very low feedback capacitance. It is suitable for applications such as pager front ends, RF front ends, etc.
This document is a datasheet for the Philips BFG403W, an NPN double polysilicon wideband transistor designed for low voltage applications. It features a plastic dual-emitter SOT343R package and includes specifications such as very high power gain, low noise figure, and a transition frequency of 17 GHz.
The datasheet provides quick reference data, limiting values, thermal characteristics, and detailed electrical characteristics including DC current gain, feedback capacitance, and transition frequency. It also contains graphical representations of performance curves for parameters like maximum stable gain, insertion power gain, noise figure, and S-parameters.
| Transition frequency (fT) | 17 GHz |
|---|
The maximum total power dissipation is 16 mW when the temperature at the soldering point is less than 140 °C.
The maximum collector-emitter voltage is 4.5 V when the base is open.
The maximum DC current gain is 120 when the collector current is 3 mA and the collector-emitter voltage is 2 V.