This document describes the features of the BFG425W NPN 25 GHz wideband transistor, including very high power gain, low noise figure, high transition frequency, low feedback capacitance, etc. The product is suitable for RF front end, wideband applications, radar detectors, pagers, satellite television tuners, and high frequency oscillators.
This document is a datasheet for the Philips BFG425W, an NPN double polysilicon wideband transistor with a buried layer. It features very high power gain and low noise figure, housed in a plastic 4-pin SOT343R package.
The specification covers electrical characteristics such as collector-base voltage (10 V), transition frequency up to 25 GHz, and maximum power gain of 20 dB. The device is intended for use in RF front ends, wideband applications like analog/digital cellular telephones, radar detectors, pagers, satellite television tuners, and high-frequency oscillators.
| Collector-base voltage (VcBo) | 10 V |
|---|---|
| Collector-emitter voltage (VceO) | 4.5 V |
| Total power dissipation (Prot) | 135 mW |
| DC current gain (heo) | 80 typ. |
| Transition frequency (fr) | 25 GHz |
| Maximum power gain (Gmax) | 20 dB |
| Noise figure (F) | 1.2 dB |
The device comes in a plastic, 4-pin dual-emitter SOT343R package.
The maximum operating junction temperature (Tj) is 150 °C.