This document describes a BFG35 NPN 4 GHz wideband transistor, intended for wideband amplifier applications. It features high output voltage capabilities.
This document is a product specification datasheet for the Philips BFG35, an NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. The device is intended for wideband emitter amplifier applications and features high output voltage capabilities.
| Collector-emitter voltage (open base) | 18 V |
|---|---|
| DC collector current | 150 mA |
| Transition frequency (typical) | 4 GHz |
| Maximum unilateral power gain (typical) | 15 dB |
| Output voltage (typical) | 750 mV |
| Collector capacitance (typical) | 2 pF |
The maximum collector-emitter voltage with an open base is 18 V.