This document is the product specification of BFG480W NPN wideband transistor. The product has high power gain, high efficiency, low noise figure, high transition frequency, low feedback capacitance, etc. It is suitable for high linearity system requirements RF front end (CDMA), common emitter class AB driver and other applications.
The document describes the Philips BFG480W, an NPN double polysilicon wideband transistor with a buried layer. It is packaged in a 4-pin dual-emitter SOT343R plastic package and is suitable for low voltage applications.
Key features include high power gain, high efficiency, low noise figure, and a high transition frequency of up to 21 GHz. The device supports both linear and non-linear operation.
| Collector-emitter voltage (VCEO) | 4.5 V |
|---|---|
| Collector current (DC) (IC) | 80 mA to 250 mA |
| Total power dissipation (Ptot) | 360 mW |
The maximum total power dissipation is 360 mW when the temperature at the soldering point of the emitter pins is less than 60°C.
The maximum collector current (DC) is 250 mA.
The maximum collector-emitter voltage is 4.5 V with an open base.