The CBSL150 is a NPN Silicon RF Power Transistor designed for 900MHz Class AB Cellular Base Station Amplifiers. It features Internal Input/Output Matching, PG = 9.0 dB Typical at 150W/900MHz, and Omnigold™ Metalization System.
The ASI CBSL150 is an NPN silicon RF power transistor designed for use in 900 MHz Class AB cellular base station amplifiers. It features an internal input/output matching network and utilizes the Omnigold™ Metalization System. The device is housed in a .400 BAL FLG (C) package style.
| Frequency | 900 MHz |
|---|---|
| Class | AB |
| Power Gain | 9.0 dB Typ. |
| Output Power | 150 W |
| Package Style | .400 BAL FLG (C) |
The transistor is designed for use in 900 MHz Class AB cellular base station amplifiers.
The typical power gain is 9.0 dB when operating at 150 W and 900 MHz.
The maximum power dissipation is 300 W when the temperature is 25 degrees Celsius.