The document provides specifications for the FMB175 NPN SILICON RF POWER TRANSISTOR from Advanced Semiconductor. The product features include 65V BVCO, 36V VCEO, 4.0V VEBO, and 20A IC.
The document describes the ASI FMB175, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It provides key specifications including a collector current of 20A and a power dissipation of 270W at 25°C.
| Power Dissipation (Pss) | 270 W @ To = 25°C |
|---|---|
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Collector-Emitter Breakdown Voltage (BVceo) | 35 V |
The device has a maximum power rating of 270 W when the temperature is 25°C.
The unit operates from -65 °C to +200 °C and can be stored from -65 °C to +150 °C.
The maximum rated voltage between the collector and emitter is 36 V.