The document describes the features and characteristics of the ASI HF20-12S model, including a minimum power gain of 18 dB, a maximum -30 dBc IMD3 at 20 W/30 MHz, and the Omnigold™ metalization system.
This document is a datasheet for the Advanced Semiconductor HF20-12S, an NPN silicon RF power transistor designed for high-frequency applications. Key features include a minimum power gain (PG) of 18 dB at 20 W/30 MHz and a maximum third-order intermodulation distortion (IMD3) of -30 dBc at 20 W PEP. The device utilizes the Omnigold™ Metalization System.
| Collector-Base Voltage (VCBO) | 36 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 18 V |
| Emitter-Base Voltage (VEBO) | 4.0 V |
| Power Dissipation (PDISS) | 80 W @ TC = 25 OC |
| Operating Junction Temperature (TJ) | -65 OC to +200 OC |
| Storage Temperature (TSTG) | -65 OC to +150 OC |
| Thermal Resistance (qqJC) | 2.2 OC/W |
| Power Gain (PG) | 18 dB min. at 20 W/30 MHz |
| Third-Order Intermodulation Distortion (IMD3) | -30 dBc max. at 20 W (PEP) |
The device provides a minimum gain of 18 dB when operating at 20 W and 30 MHz.
The maximum power dissipation rating is 80 W when the case temperature is 25 OC.
The junction temperature can range from -65 OC to +200 OC, while storage is rated from -65 OC to +150 OC.