This document describes the features and characteristics of the ASI HF8-28S model, including voltage and current parameters. The product features high power and low distortion.
This document is a datasheet for the ASI HF8-28S, an NPN Silicon RF Power Transistor designed by Advanced Semiconductor Inc. The device features the Omnigold Metalization System and is available in a 380 4L STUD package style.
The datasheet provides maximum ratings including collector current of 1.0A, voltage limits up to 65V, and power dissipation of 13.0 W at Tg = 25 °C. It also lists key electrical characteristics such as breakdown voltages (BV cco, BV ces), leakage currents, capacitance, and gain-bandwidth product.
| Collector-Emitter Voltage (Vceo) | 65V |
|---|---|
| Emitter-Base Voltage (Vebo) | 35V |
| Collector-Emitter Breakdown Voltage (Vces) | 65V |
| Emitter-Base Breakdown Voltage (Vebo) | 4.0V |
| Power Dissipation (Ptot) | 13.0 W @ Tg = 25 °C |
| Operating Temperature Range (Tj) | -65 °C to +200 °C |
| Storage Temperature Range (Tstg) | -65 °C to +150 °C |
| Thermal Resistance (RthJC) | 13.5 °C/W |
The ASI HF8-28S is an NPN silicon RF power transistor.
The minimum power gain is 21 dB at 8 W/30 MHz.
The maximum intermodulation distortion is -30 dBc at 8 W PEP.