NPN Manuals

Key facts

Manuals

47

Last added

2012-07-12

Latest NPN manuals

• NPN BC 337 BC 338 General Purpose Transistors handbook

  BC 337 / BC 338 are general purpose NPN silicon transistors in a TO-92 package.

• NPN BC 817 BC 818 General Purpose Transistors handbook

  BC 817 / BC 818 is a general purpose transistor produced by Siemens. Its collector current is 800 mA and the emitter current is 200 mA. The feature is low power consumption. The power loss is 310 mW and the package type is SOT-23 plastic housing.

• NPN BCV27 BCV47 Darlington Transistors handbook

  BCV27, BCV47 are NPN silicon planar Darlington transistors, SOT-23 package, power dissipation 250mW, maximum collector-emitter voltage 30V or 60V, maximum collector-base voltage 40V or 80V, maximum emitter-base voltage 10V.

• NPN BCW 65 BCW 66 General Purpose Transistors handbook

  This document describes the features and characteristics of BCW 65 and BCW 66 general purpose NPN surface mount transistors. These transistors have a power dissipation of 250mW and a DC collector current of 800mA. They are suitable for surface mounting on printed circuit boards.

• NPN General Purpose Transistors BCW 60 handbook

  BCW60 is a surface mount NPN transistor from Schneider Electric. It has a power dissipation of 250 mW and a SOT-23 package.

• NPN SILICON RF POWER TRANSISTOR TVU012 handbook

  This document describes the features and characteristics of the ASI TVU012, an electronic component product from Advanced Semiconductor, including parameters such as BVCEO, BVCER, BVEBO, ICES, hFE, etc. The product is an NPN silicon RF power transistor designed for 860MHz frequency, with input matching network and Omnigold™ metalization system.

• NPN SILICON RF POWER TRANSISTOR TVU014 handbook

  ASI TVU014 is a NPN silicon RF power transistor featuring Omnigold™ metallization system, maximum current of 2 x 2.6 A, maximum voltage of 45 V, maximum power of 65 W, maximum operating temperature range of -65 °C to +200 °C, maximum storage temperature range of -65 °C to +150 °C, and thermal resistance of 2.5 °C/W.

• NPN SILICON RF POWER TRANSISTOR TVU020 handbook

  This document describes the characteristics and features of the TVU020 NPN Silicon RF Power Transistor by ADVANCED SEMICONDUCTOR, INC. (ASI). The transistor features an input matching network and Omnigold™ metallization system.

• NPN SILICON RF POWER TRANSISTOR TVU025 handbook

  The document describes the features and characteristics of the ASI TVU 025 RF power transistor.

• NPN SILICON RF POWER TRANSISTOR TVU100 handbook

  The document describes the characteristics and features of the ASI TVU100 NPN Silicon RF Power Transistor, including parameters such as current, voltage, power, and frequency.

• NPN SILICON RF POWER TRANSISTOR TVU150 handbook

  This document describes the features and characteristics of the TVU150 model from Advanced Semiconductor, Inc.

• NPN SILICON RF POWER TRANSISTOR TVU150A handbook

• NPN SILICON RF POWER TRANSISTOR TVV005 handbook

  This document is the datasheet of ASI TVV005, introducing the features and characteristics of the product, including the maximum current, maximum voltage, maximum power, maximum working temperature, etc.

• NPN SILICON RF POWER TRANSISTOR TVV007 handbook

  The document provides information about the features and characteristics of the ASI TVV007 model, including maximum ratings, pin layout, and dimensions.

• NPN SILICON RF POWER TRANSISTOR TVV010 handbook

  The ASI TVV010 is a NPN silicon RF power transistor with a maximum current of 10A, a maximum voltage of 60V and a maximum power dissipation of 140W.