The ASI HF50-12F is a NPN silicon RF power transistor designed for FEATURES: • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 30 W(PEP) • Omnigold™ Metalization System
This document is a technical datasheet for the ASI HF50-12F, an NPN silicon RF power transistor designed by Advanced Semiconductor Inc. The device features the Omnigold Metalization System and is intended for high-frequency applications.
The datasheet provides maximum ratings including collector current of 12.0A and a power dissipation of 183 W at 25 °C. It also lists key electrical characteristics such as breakdown voltages, capacitance values, and efficiency metrics under specific test conditions.
| Collector Current (Ic) | 12.0A |
|---|---|
| Collector-Emitter Voltage (Vceo) | 36 V |
| Emitter-Base Voltage (Veco) | 18V |
| Collector-Emitter Saturation Voltage (Vces) | 3.5V |
| Power Dissipation (Poiss) | 183 W @ To = 25 °C |
| Operating Temperature Range (Ty) | -65 °C to +200 °C |
| Storage Temperature Range (Tste) | -65 °C to +150 °C |
The ASI HF50-12F is an NPN silicon RF power transistor designed for use in radio frequency applications.
The maximum power dissipation is 183 W when the temperature is 25 °C.
The maximum collector current rating is 12.0A.