ASI HF8-28F is a NPN silicon RF power transistor, whose features are: PG is 21 dB min. at 8 W/30 MHz, IMD3 is -30 dBc max. at 8 W(PEP).
The ASI HF8-28F is an NPN silicon RF power transistor designed for high-frequency applications. It features an Omnigold™ Metalization System and is available in a 4LFLG package style.
| Output Power (Pg) | 8 W/30 MHz |
|---|---|
| Intermodulation Distortion (IMD) | -30 dBc max. |
| Package Style | 4LFLG |
| Power Dissipation (Pd) | 13.0 W |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Thermal Resistance (Rth) | 13.5 °C/W |
| Collector-Base Capacitance (Cob) | 15 pF |
| Gain (Gp) | 10 dB |
The ASI HF8-28F is an NPN silicon RF power transistor.
The device has a maximum Vceo of 65 V and a maximum Ic of 1.0 A.
The maximum power dissipation (Pc) is 13.0 W when Tc = 25°C.