ASI HF100-12 is a NPN Silicon RF Power Transistor featuring: * PG=12 dB min. at 100 W/30 MHz. * IMD3=-30 dBc max. at 100 W(PEP). * Omnigold™ Metalization System.
This document is a datasheet for the ASI HF100-12, an NPN silicon RF power transistor designed in a .500 4L FLG package style. It provides key features such as the Omnigold™ Metalization System and specifies performance metrics including IMD and gain.
| Package Style | .500 4L FLG |
|---|---|
| Metalization System | Omnigold™ Metalization System |
| Operating Temperature Range | -65 °C to +200 °C |
| Collector Dissipation (Tc=25°C) | 290 W |
| Collector-Emitter Breakdown Voltage | 36 V |
| Collector-Base Breakdown Voltage | 36 V |
| Emitter-Base Breakdown Voltage | 18 V |
| Collector-Source Breakdown Voltage | 4.0 V |
| Input Capacitance (f = 1.0 MHz) | 400 pF |
| Forward Current Gain (f = 30 MHz) | 11 to 13 dB |
| Intermodulation Distortion (Pout = 100 W) | -30 dBc |
The maximum power dissipation is 290 W when the temperature is 25°C.
The maximum collector-emitter voltage is 36 V.
The maximum intermodulation distortion is -30 dBc at 100 W output power.