This document is the specification of ASI FMB150. It introduces the features and characteristics of the product, including maximum current, maximum voltage, and maximum power.
The ASI FMB150 is an NPN silicon RF power transistor designed for use in radio frequency applications. It features the Omnigold™ Metalization System and is available in a .500 4L FLG package style with a nominal lead length of 2.125 inches.
The device operates with a maximum collector-emitter voltage (Vceo) of 60V and a maximum collector dissipation of 150W at 25°C. Key electrical characteristics include a minimum current gain (hFE) of 20 at Vce=5.0V and Ic=1.0A, and a maximum input capacitance (Cies) of 140 pF at Vce=28V and f=1.0 MHz.
| Package Style | .500 4L FLG |
|---|---|
| Lead Length | 2.125 NOM. |
| Metalization System | Omnigold™ |
| Collector-Emitter Voltage (Vceo) | 60V |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
The ASI FMB150 is designed for use as an NPN silicon RF power transistor.
The operating temperature range is from -65 °C to +200 °C.