This document describes the features and characteristics of the ASI HF50-12S NPN Silicon RF Power Transistor, including maximum ratings for current, voltage, and power dissipation.
The document describes the ASI HF50-12S, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. Key features include a minimum power gain of 55% at 50 W PEP and a maximum third-order intermodulation distortion (IMD3) of -30 dBc.
| Collector Current (Ic) | 12.0A |
|---|---|
| Collector-Emitter Voltage (Vceo) | 36 V |
| Emitter-Base Voltage (Vebo) | 18V |
| Collector-Base Voltage (Vcbo) | 3.5V |
| Power Dissipation (Poiss) | 183 W @ To = 25 °C |
| Operating Temperature Range (Ty) | -65 °C to +200 °C |
| Storage Temperature Range (Tste) | -65 °C to +150 °C |
| Thermal Resistance Junction-to-Case (Buc) | 1.05 °C/W |
The maximum power dissipation is 183 W when the temperature is 25 °C.
The maximum collector current rating is 12.0 A.
The device operates from -65 °C to +200 °C.