HF5-12S is a NPN silicon RF power transistor produced by ASI company, which has features such as PG = 20 dB min. at 5 W/30 MHz and IMD3 = -30 dBc max. at 5 W(PEP)
The ASI HF5-12S is an NPN silicon RF power transistor designed for high-performance applications. It utilizes the Omnigold™ Metalization System to ensure reliability and performance.
| Collector-Emitter Voltage (Vceo) | 18V |
|---|---|
| Collector-Base Voltage (Vcbo) | 36 V |
| Emitter-Base Voltage (Vebo) | 4.0V |
| Power Dissipation (Poiss) | 80 W @ Tg = 25 °C |
| Operating Temperature (Ty) | -65 °C to +200 °C |
| Storage Temperature (Tst0) | -65 °C to +150 °C |
| Thermal Resistance (8uc) | 2.2 °C/W |
| Gain (Gp) | 15 dB min. |
| Intermodulation Distortion (IMD3) | -30 dBc max. |
The ASI HF5-12S is designed for use as an NPN silicon RF power transistor.
The maximum power dissipation is 80 W at a temperature of 25 °C.