The ASI HF10-12F is a NPN silicon RF power transistor with a maximum current of 4.5 A, maximum voltages of 36 V and 18 V, and maximum power of 80 W. It features a PG of 20 dB min. at 10 W/30 MHz and an IMD3 of -30 dBc max. at 10 W(PEP).
This document is a datasheet for the ASI HF10-12F, an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. The device features a .380 4L FLG package style and is rated for a power dissipation of 80 W at 25 °C.
| Package Style | .380 4L FLG |
|---|---|
| Power Dissipation | 80 W @ To = 25 °C |
| Operating Temperature | -65 °C to +200 °C |
| Storage Temperature | -65 °C to +150 °C |
| Collector-Emitter Voltage | 36 V |
| Collector-Base Voltage | 40 V |
| Gain (Gre) | 18 dB at 30 MHz |
| Intermodulation Distortion | -30 dBc max. |
The ASI HF10-12F is an NPN silicon RF power transistor.
The minimum gain is 20 dB at 10 W/30 MHz.
The maximum power dissipation is 80 W at a temperature of 25 °C.