The UFT30-28 is a silicon RF power transistor designed for Class A and B power amplifiers operating up to 500 MHz.
The document describes the Advanced Semiconductor UFT30-28, an NPN silicon RF power transistor. It is specifically designed for use in Class A and B power amplifier applications operating at frequencies up to 500 MHz.
Key features include a minimum gain (Pg) of 7.0 dB at 25 W/400 MHz and a typical noise figure (Np) of 60%. The device utilizes the Omnigold™ Metalization System and is packaged in a .380 4L FLG style.
| Package Style | .380 4L FLG. |
|---|---|
| Minimum Gain (Pg) | 7.0 dB min. at 25 W/400 MHz |
| Typical Noise Figure (Np) | 60 % |
The transistor has a maximum power dissipation of 100 W at a temperature of 25°C.
The typical noise figure (Np) for this transistor is 60%.