This document describes the characteristics and parameters of the ASI HF5-12F NPN Silicon RF Power Transistor.
This document is a datasheet for the ASI HF5-12F, an NPN silicon RF power transistor. The device is designed in a .380 4L FLG package style and features the Omnigold™ Metalization System.
The datasheet provides maximum ratings including a collector-emitter voltage of 18 V and a power dissipation of 80 W at 25°C. It also lists key electrical characteristics such as current gain (hFE) ranging from 10 to 200, input capacitance of 100 pF, and third-order intermodulation distortion (IMD3) performance.
| Package Style | .380 4L FLG |
|---|---|
| Metalization System | Omnigold™ |
| Collector-Emitter Voltage (VCEO) | 18 V |
| Power Dissipation (Pd) | 80 W @ To = 25°C |
| Input Capacitance (Cie) | 100 pF |
| Third-Order Intermodulation Distortion (IMD3) Min | -30 dBc |
It is an NPN silicon RF power transistor designed for a .380 4L FLG package style.
The device can operate from -65 °C to +200 °C.