The document describes the features and characteristics of the ASI TVU004 model, including maximum current, maximum voltage, maximum power, and other parameters.
The ASI TVU004 is an NPN silicon RF power transistor designed for applications requiring high frequency performance. It features the Omnigold™ Metalization System and is packaged in a 4L stud style with #8-32 UNC threads.
The document provides comprehensive technical data including maximum ratings such as a collector current of 1.59A and a power dissipation of 31.8W at 25°C. Key electrical characteristics include a maximum collector-emitter voltage of 65V and a typical power gain of 8.5 dB at 860 MHz.
| Package Style | 4L STUD |
|---|---|
| Thread Size | #8-32 UNC |
| Collector Current | 1.59A |
| Collector-Emitter Voltage | 65V |
| Collector-Base Voltage | 65 V |
| Emitter-Base Voltage | 3.5V |
| Power Dissipation | 31.8W @T.=25°C |
| Operating Temperature | -65 °C to +200 °C |
| Storage Temperature | -65 °C to +150 °C |
| Thermal Resistance | 7.0 °C/W |
| Collector-Cutoff Current | 1.0 mA |
| Input Capacitance | 20 pF |
| Power Gain | 8.5 dB |
| Intermodulation Distortion | -60 dBc |
The device has a maximum collector current of 1.59 A.
The transistor dissipates a maximum of 31.8 W when the ambient temperature is 25°C.
The unit operates from -65 °C to +200 °C and stores from -65 °C to +150 °C.