This document is about the product specifications of Advanced Semiconductor Inc. The document describes the features and characteristics of the NPN Silicon RF Power Transistor FMB075.
The ASI FMB075 is an NPN silicon RF power transistor designed for high-frequency and high-power applications. It features the Omnigold™ Metalization System and is housed in a .500 4L FLG package. Key maximum ratings include a collector current (IC) of 10A, a collector-base voltage (VCB) of 60V, and a power dissipation (PDISS) of 140W at 25°C.
| Collector-Base Voltage (VCB) | 60 V |
|---|---|
| Collector-Emitter Voltage (VCE) | 35 V |
| Power Dissipation (PDISS) | 140 W |
| Operating Temperature (TJ) | -65 OC to +200 OC |
| Storage Temperature (TSTG) | -65 OC to +150 OC |
| Thermal Resistance Junction-to-Case (θJC) | 1.5 OC/W |
| Package Style | .500 4L FLG |
The power dissipation (PDISS) is 140 W at TC = 25 OC.
The junction temperature (TJ) ranges from -65 OC to +200 OC.