Key facts
- Brand
- ASI
- Model
- CBSL15
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
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ASI CBSL150 NPN Silicon RF Power Transistor Datasheet
Datasheet 1 pages · 13 KB · EN
The ASI CBSL150 is an NPN silicon RF power transistor designed for use in 900 MHz Class AB cellular base station amplifiers. It features an internal input/output matching network and utilizes the Omnigold™ Metalization System. The device is housed in a .400 BAL FLG (C) package style.
Read onlineASI CBSL15 specifications
| Frequency | 900 MHz |
|---|---|
| Class | AB |
| Power Gain | 9.0 dB Typ. |
| Output Power | 150 W |
| Package Style | .400 BAL FLG (C) |
Source: ASI CBSL150 NPN Silicon RF Power Transistor Datasheet
All ASI CBSL15 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the ASI CBSL150 designed for?
The transistor is designed for use in 900 MHz Class AB cellular base station amplifiers.
What is the typical power gain at 150 W and 900 MHz?
The typical power gain is 9.0 dB when operating at 150 W and 900 MHz.
What is the maximum power dissipation at 25°C?
The maximum power dissipation is 29 W at 25°C.
What is the operating temperature range?
The operating temperature range is from -65°C to +200°C.