This file is the datasheet of ASI CBSL60B, which introduces the features and characteristics of the product, including BVCBO, BVCEO, BVEBO, IC, VCBO, VCEO, VEBO, PDISS, TJ, TSTG, θθJC, etc.
The ASI CBSL60B is an NPN silicon RF power transistor designed with an input matching network and Omnigold™ Metalization System. It features a package style of .450 BAL FLG (A) with dimensions provided in the document.
Key electrical characteristics include a maximum collector current (Ic) of 80A, a collector-emitter voltage (Vceo) of 28V, and a power dissipation (Poiss) of 146 W at Tc = 25 °C. The device operates within a temperature range of -65 °C to +200 °C.
| Collector-Emitter Voltage (Vceo) | 28 V |
|---|---|
| Power Dissipation (Poiss) | 146 W @ To = 25 °C |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Thermal Resistance (RthJC) | 1.2°C/w |
The ASI CBSL60B is an NPN silicon RF power transistor designed for use with an input matching network.
The maximum power dissipation is 146 W when the temperature is 25 °C.