The CBSL100 is a power transistor produced by ASI company. It has an input matching network and Omnigold metalization system. Its maximum current is 25A, maximum voltage is 60V and maximum power is 310W.
The ASI CBSL100 is an NPN silicon RF power transistor designed for high-frequency power amplification applications. It features an input matching network and an Omnigold™ metalization system to ensure high efficiency and stability. Key maximum ratings include a collector current of 25A, a collector-emitter breakdown voltage of 30V, and a power dissipation of 310W at 25°C.
| Collector-Base Breakdown Voltage (VCBO) | 60 V |
|---|---|
| Collector-Emitter Breakdown Voltage (VCEO) | 30 V |
| Emitter-Base Breakdown Voltage (VEBO) | 3.0 V |
| Power Dissipation (PDISS) | 310 W |
| Operating Temperature (TJ) | -65 OC to +200 OC |
| Storage Temperature (TSTG) | -65 OC to +150 OC |
| Thermal Resistance Junction-to-Case (θJC) | 0.6 OC/W |
The maximum power dissipation is 310 W at a case temperature of 25°C.
The device operates from -65°C to +200°C.
Yes, the device is designed with an input matching network.