Key facts
- Brand
- ASI
- Model
- CBSL6
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
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ASI CBSL60B NPN Silicon RF Power Transistor Datasheet
The ASI CBSL60B is an NPN silicon RF power transistor designed with an input matching network and Omnigold™ Metalization System. It features a package style of .450 BAL FLG (A) with dimensions provided in the document.
Key electrical characteristics include a maximum collector current (Ic) of 80A, a collector-emitter voltage (Vceo) of 28V, and a power dissipation (Poiss) of 146 W at Tc = 25 °C. The device operates within a temperature range of -65 °C to +200 °C.
ASI CBSL6 specifications
| Collector-Emitter Voltage (Vceo) | 28 V |
|---|---|
| Power Dissipation (Poiss) | 146 W @ To = 25 °C |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Thermal Resistance (RthJC) | 1.2°C/w |
Source: ASI CBSL60B NPN Silicon RF Power Transistor Datasheet
All ASI CBSL6 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the ASI CBSL60B designed for?
The ASI CBSL60B is an NPN silicon RF power transistor designed for use with an input matching network.
What is the maximum power dissipation at 25 °C?
The maximum power dissipation is 146 W when the temperature is 25 °C.
What is the maximum power dissipation of the CBSL6?
The maximum power dissipation is 53 W at a case temperature of 25°C.
What is the operating temperature range?
The junction temperature range is from -65°C to +200°C.