This document describes the features and characteristics of the ASI CBSL6 RF power transistor.
The ASI CBSL6 is an NPN silicon RF power transistor designed for high-frequency RF power applications. It utilizes the Omnigold™ Metalization System to achieve high voltage and frequency performance. The device is housed in a .230 6L FLG package.
| Collector-Base Voltage (VCBO) | 50 V |
|---|---|
| Collector-Emitter Voltage (VCES) | 35 V |
| Emitter-Base Voltage (VEBO) | 3.5 V |
| Power Dissipation (PDISS) | 53 W |
| Operating Temperature (TJ) | -65 OC to +200 OC |
| Package Style | .230 6L FLG |
The maximum power dissipation is 53 W at a case temperature of 25°C.
The junction temperature range is from -65°C to +200°C.