Advanced Semiconductor CBSL30 RF Power Transistor Datasheet

This data sheet provides CBSL30's characteristics parameters, including BVCBO, BVCER, BVCEO, BVEBO, ICBO, hFE, COB, PG, IMD3, VSWR1, VSWR2, OVD etc.

Brand: NPN
Category: Other Electronics
Document type: Datasheet
Language: Chinese
Pages: 1
File format: PDF
File size: 14 KB
Published: 11 June, 2012
Updated: 30 September, 2023
MD5 checksum: D9232010E8EBE50B2908A8CD8DF5DFD9
PDF: Advanced Semiconductor CBSL30 RF Power Transistor Datasheet PDF

About this manual

The document is a technical datasheet for the ASI CBSL30, an NPN silicon RF power transistor designed with Omnigold™ Metalization System. It details key performance metrics such as collector-emitter breakdown voltage (25V) and current gain (hFE up to 100). This manual is written in Chinese.

What's inside

Description
Features
Maximum Ratings
Electrical Characteristics
Package Dimensions

Specifications

Collector Current (IC)	7.5 A
Collector-Base Breakdown Voltage (VCBO)	48 V
Collector-Emitter Breakdown Voltage (VCEO)	25 V
Emitter-Base Breakdown Voltage (VEBO)	3.5 V
Power Dissipation (PDISS)	88 W @ TC = 25 OC
Operating Junction Temperature Range (TJ)	-65 OC to +200 OC

Frequently asked questions

What is the maximum continuous collector current rating for the CBSL30?

The maximum collector current is rated at 7.5 A.

What is the maximum power dissipation of the CBSL30 at 25°C?

The device can dissipate a maximum of 88 W at 25°C.

What is the maximum operating junction temperature for this transistor?

The maximum junction temperature is +200°C.

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