This document provides electrical characteristics and maximum ratings for the Toshiba 1SS313 silicon epitaxial planar diode. It includes parameters such as reverse voltage, forward current, junction temperature, and capacitance. The datasheet also contains graphs illustrating forward voltage versus current and reverse voltage versus current at specified temperatures. It is intended for design engineers and includes standard safety and liability disclaimers from Toshiba Corporation.
| Reverse Voltage | 30 V |
|---|---|
| Forward Current | 50 mA |
| Junction Temperature | 125 °C |
| Total Capacitance | 1.2 pF (Max.) |
| Series Resistance | 0.6 Ω (Typ.) |
The maximum reverse voltage rating is 30 V.
The typical forward voltage is 0.85 V.
The maximum junction temperature is 125 °C.